| dc.creator | Lombardi, Rina | |
| dc.creator | Aragon, Ricardo | |
| dc.date.accessioned | 2019-08-21T20:14:12Z | |
| dc.date.accessioned | 2022-10-15T15:32:38Z | |
| dc.date.available | 2019-08-21T20:14:12Z | |
| dc.date.available | 2022-10-15T15:32:38Z | |
| dc.date.created | 2019-08-21T20:14:12Z | |
| dc.date.issued | 2010-02 | |
| dc.identifier | Lombardi, Rina; Aragon, Ricardo; MOS device chemical response reversal with temperature; Elsevier Science Sa; Sensors and Actuators B: Chemical; 144; 2; 2-2010; 457-461 | |
| dc.identifier | 0925-4005 | |
| dc.identifier | http://hdl.handle.net/11336/81936 | |
| dc.identifier | CONICET Digital | |
| dc.identifier | CONICET | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/4403340 | |
| dc.description.abstract | Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (ΔV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response. | |
| dc.language | eng | |
| dc.publisher | Elsevier Science Sa | |
| dc.relation | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.snb.2009.03.072 | |
| dc.relation | info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0925400509002998 | |
| dc.rights | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | |
| dc.rights | info:eu-repo/semantics/restrictedAccess | |
| dc.subject | CHEMICAL SENSITIVITY | |
| dc.subject | MOS CAPACITORS | |
| dc.subject | RESPONSE REVERSAL | |
| dc.subject | THRESHOLD VOLTAGE | |
| dc.title | MOS device chemical response reversal with temperature | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:ar-repo/semantics/artículo | |
| dc.type | info:eu-repo/semantics/publishedVersion | |
