Subband and transport calculations in double -type -doped quantum wells in Si

Abstract

The Thomas-Fermi approximation is implemented in two coupled n-type -doped quantum wells in Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the subband level structure. The longitudinal and transverse levels are obtained as a function of the impurity density and the interlayer distance. The exchange-correlation effects are analyzed from an impurity density of 8 1012 to 6.5 1013 cm−2. The transport calculations are based on a formula for the mobility, which allows us to discern the optimum distance between wells for maximum mobility.