| dc.contributor | https://orcid.org/0000-0003-0087-8991 | |
| dc.creator | Rodríguez Vargas, Isaac | |
| dc.creator | Gaggero Sager, Luís Manuel | |
| dc.date.accessioned | 2018-08-13T16:15:31Z | |
| dc.date.available | 2018-08-13T16:15:31Z | |
| dc.date.created | 2018-08-13T16:15:31Z | |
| dc.date.issued | 2006-02 | |
| dc.identifier | 0021-8979 | |
| dc.identifier | 1089-7550 | |
| dc.identifier | http://hdl.handle.net/20.500.11845/632 | |
| dc.identifier | https://doi.org/10.48779/de7x-8850 | |
| dc.description.abstract | The Thomas-Fermi approximation is implemented in two coupled n-type -doped quantum wells in
Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the
subband level structure. The longitudinal and transverse levels are obtained as a function of the
impurity density and the interlayer distance. The exchange-correlation effects are analyzed from an
impurity density of 8 1012 to 6.5 1013 cm−2. The transport calculations are based on a formula
for the mobility, which allows us to discern the optimum distance between wells for maximum
mobility. | |
| dc.language | eng | |
| dc.publisher | American Institute of Physics | |
| dc.relation | generalPublic | |
| dc.relation | https://aip.scitation.org/doi/10.1063/1.2168024 | |
| dc.rights | http://creativecommons.org/licenses/by-nc-sa/3.0/us/ | |
| dc.rights | Atribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América | |
| dc.source | Journal of Applied Physics Vol. 99, 2006 | |
| dc.title | Subband and transport calculations in double -type -doped quantum wells in Si | |
| dc.type | info:eu-repo/semantics/article | |
