Electron transport in AlxGa1 xAs d-MIGFETs: Conductivity enhancement induced by magnetic field effects

Abstract

The electronic structure and the transport phenomena of d-MIGFETs have been studied in an AlxGa1 xAs host matrix. The subband structure and mobility calculations were performed within the effective mass approximation and relative mobility formula, respectively. Both the electronic structure and the transport properties are calculated as dependent on the applied magnetic field (B), the aluminum molar fraction (x) and the contact voltage in one of the gates (VC1). It was found that the mobility and conductivity are enhanced by increasing the magnetic field for appropriate aluminum molar fraction and contact voltage. In particular, the mobility (conductivity) is improved almost 26% (32%) for VC1 ¼ 900 meV (850 meV), x ¼ 0.2, and B ¼ 20 T.