Electron transport in AlxGa1 xAs d-MIGFETs: Conductivity enhancement induced by magnetic field effects

dc.contributorhttps://orcid.org/0000-0003-0087-8991
dc.creatorOutmane, Oubram
dc.creatorRodríguez Vargas, Isaac
dc.creatorGaggero Sager, Luís Manuel
dc.creatorCisneros Villalobos, Luis
dc.creatorBassam, Ali
dc.creatorVelásquez Aguilar, J.G.
dc.creatorLimon Mendoza, Mario
dc.date.accessioned2018-11-13T20:45:29Z
dc.date.available2018-11-13T20:45:29Z
dc.date.created2018-11-13T20:45:29Z
dc.date.issued2016-10-21
dc.identifier0749-6036
dc.identifierhttp://hdl.handle.net/20.500.11845/666
dc.identifierhttps://doi.org/10.48779/pkqj-a067
dc.description.abstractThe electronic structure and the transport phenomena of d-MIGFETs have been studied in an AlxGa1 xAs host matrix. The subband structure and mobility calculations were performed within the effective mass approximation and relative mobility formula, respectively. Both the electronic structure and the transport properties are calculated as dependent on the applied magnetic field (B), the aluminum molar fraction (x) and the contact voltage in one of the gates (VC1). It was found that the mobility and conductivity are enhanced by increasing the magnetic field for appropriate aluminum molar fraction and contact voltage. In particular, the mobility (conductivity) is improved almost 26% (32%) for VC1 ¼ 900 meV (850 meV), x ¼ 0.2, and B ¼ 20 T.
dc.languageeng
dc.publisherElsevier
dc.relationgeneralPublic
dc.relationhttps://www.sciencedirect.com/science/article/pii/S0749603616312654?via%3Dihub
dc.rightshttp://creativecommons.org/licenses/by-nc-sa/3.0/us/
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América
dc.sourceSuperlattices and Microstructures, Vol.100, pp.867-875
dc.titleElectron transport in AlxGa1 xAs d-MIGFETs: Conductivity enhancement induced by magnetic field effects
dc.typeinfo:eu-repo/semantics/article


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