Ohmic contacts with palladium diffusion barrier on III-V semiconductors

Abstract

Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs su bstrates. The metal­ contact structure consists of a gold-based-alloy /Pd/semiconductor-substrate. Characteristics of the deposited Pd fi l ms by "electroless" deposition on semiconductor-substrates are reported. SIMS analysis realized on the meta l-semiconductor st r uctures demonstrates the capability of the Pd .films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM ).