Ohmic contacts with palladium diffusion barrier on III-V semiconductors

dc.creatorDiaz Reyes, Joel
dc.date.accessioned2012-11-27T18:11:32Z
dc.date.available2012-11-27T18:11:32Z
dc.date.created2012-11-27T18:11:32Z
dc.date.issued2012-11-27
dc.identifierhttp://www.repositoriodigital.ipn.mx/handle/123456789/8595
dc.description.abstractOhmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs su bstrates. The metal­ contact structure consists of a gold-based-alloy /Pd/semiconductor-substrate. Characteristics of the deposited Pd fi l ms by "electroless" deposition on semiconductor-substrates are reported. SIMS analysis realized on the meta l-semiconductor st r uctures demonstrates the capability of the Pd .films to act as a diffusion barrier. Contact resistance of the ohmic contacts was measured by the transmission line method (TLM ).
dc.languageen
dc.subjectOhmic contacts Diffusion barriers Palladium 111-V semiconductors GaAs SIMS Transmission line method {TLM )
dc.titleOhmic contacts with palladium diffusion barrier on III-V semiconductors
dc.typeArticle


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