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Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
(2019-01-05)
MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs ...
Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
(2019-01-05)
MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs ...
Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
(2020-01-01)
This work presents an experimental analysis of the Negative-Bias-Temperature-Instability (NBTI) on omegagate nanowire (NW) pMOSFETS transistors and the trends analysis from simulations, focusing on the influence of channel ...
Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
(ELSEVIER SCIENCE BVAMSTERDAM, 2013-08-02)
The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results ...
A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs
(Ieee, 2019-01-01)
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical ...
A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
(2019-08-01)
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical ...
Estudo comparativo experimental entre o casamento do SOI nMOSFETs do tipo diamante do tipo diamante e dos seus respectivos convencionais equivalentes
(Centro Universitário da Fei, São Bernardo do Campo, 2019)
Using the Octagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
(2020-12-04)
This article describes an experimental comparative study of the matching between the Octo conventional (octagonal gate geometry) and Conventional (rectangular gate shape) n-channel Metal-Oxide-Semiconductor (MOS) Field ...