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Effect of Interface Traps on the RTS Noise Behavior of Junctionless Nanowires
(2020-08-10)
This work presents a study on the effects of single interface traps throughout the Junctionless Nanowire Transistor (JNT). The results are obtained by analyzing the Random Telegraph Signal noise of the device, which consists ...
Effect of Interface Traps on the RTS Noise Behavior of Junctionless Nanowires
(2020-08-10)
This work presents a study on the effects of single interface traps throughout the Junctionless Nanowire Transistor (JNT). The results are obtained by analyzing the Random Telegraph Signal noise of the device, which consists ...
The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors
(2020-07-31)
This paper discusses the nature of degradation by NBTI effect in MOS junctionless devices when varying the density of interface traps and surface potential. The data obtained in simulations are compared with results from ...
Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
(American Chemical Society, 2017-03)
We investigate the effects of pre- and postatomic layer deposition (ALD) defect passivation with hydrogen on the trap density and reliability of Al2O3/InGaAs gate stacks. Reliability is characterized by capacitance-voltage ...
Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistors
(2019)
© 2019 Elsevier B.V.The aim of this work is to propose a semi-analytical model for the low frequency noise caused by interface traps in Triple-Gate Junctionless Nanowire Transistors. The proposed model is based on a drain ...
Random telegraph signal noise in advanced high performance and memory devices
(2016-11-02)
Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS ...
Random Telegraph Signal Noise in Advanced High Performance and Memory Devices
(Ieee, 2016-01-01)
Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS ...