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Subband mixing inducing negative resistance
(Elsevier B.V., 1993-05-01)
A new double channel field-effect structure based on delta-doping technology is proposed Resonant tunneling between the channels is employed to control the transport along the interface plane. A realistic simulation is ...
A 540μT-1 silicon-based MAGFETA 540μT-1 silicon-based MAGFET
(Revista Mexicana de Física, 2009)
Subband mixing inducing negative resistance
(Elsevier B.V., 2014)
Subband mixing inducing negative resistance
(Elsevier B.V., 2014)
Layer-by-Layer Films with CoFe2O4Nanocrystals and Graphene Oxide as a Sensitive Interface in Capacitive Field-Effect Devices
(2022-01-01)
Sensor devices have proved to be a promising technology for portable microelectronic systems for biomedical and environmental applications. Depending on the target analyte and/or the sensor platform chosen, the study of ...
Temperature and Electric Field Influence on the Electrical Properties of Light-Emitting Devices Comprising PEDOT:PSS/GPTMS/Zn2SIO4:Mn Composites
(2018-01-01)
In the present study, we analyze the influence of temperature and active layer thickness on the electrical properties of electroluminescent devices comprising a polymeric conductive blend (poly(3,4 ethylenedioxythiophene ...
Optically-activated cascode configuration for 650 V GaN FET devices and packaging parasitic inductance effects
(Elsevier GmbH, 2019)
© 2018 Elsevier GmbHIn this paper, a novel optically-activated cascode structure is proposed to be used with a normally-on gallium nitride (GaN) field-effect transistor (FET) device to achieve an overall normally-off ...
Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes
(Institute of Electrical and Electronics Engineers, 2013-12)
This paper presents a new technique to build MOS dosimeters using unmodified standard CMOS processes. The devices are n-channel MOS transistors built with the regular Field Oxide as a thick radiation-sensitive gate. The ...