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Mostrando ítems 1-10 de 23
Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
(Ieee, 2019-01-01)
In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors ...
Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
(2019-04-01)
In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors ...
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data
(Iop Publishing Ltd, 2020-09-01)
In this paper operational transconductance amplifiers (OTA) were designed with nanowire (NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) and compared with NW Si MOSFET devices. ...
Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective
(Ieee-inst Electrical Electronics Engineers Inc, 2016-07-01)
In this work, the impact of the diameter on vertical nanowire tunnel field effect transistors is analyzed focusing on the conduction mechanism and analog parameters, considering different conduction regimes. The diameter ...
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
(2018-06-06)
This work studies differential pair circuits designed with Line tunnel field effect transistors (TFETs), comparing their suitability with conventional Point TFETs. Differential voltage gain (A d), compliance voltage and ...
Rebound effect on Charged Based Bio-TFETs for different biomolecules
(Ieee, 2019-01-01)
In this work, the charged biomolecules with different permittivity (epsilon) localized on the drain underlap region of a double gate (DG) N-type tunneling field effect transistor (nTFET) for biosensing purpose (Bio-TFET) ...
Optimization of the Dual-Technology Back-Enhanced Field Effect Transistor
(2020-09-01)
In this paper we optimize the Dual-Technology Back-Enhanced SOI (DT BESOI) FETs varying the thickness of gate oxide, silicon film and buried oxide focusing on transfer characteristics. The DT BESOI optimization takes into ...
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
(2017-04-25)
The goal of this work is to study the performance of current mirror circuits designed with line tunnel field effect transistor (TFET) devices and compare the suitability of this technology with alternatives such as point ...
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1-xAs nTFETs
(Ieee-inst Electrical Electronics Engineers Inc, 2017-09-01)
The basic analog parameters of three splits of InxGa1 - xAs nTFETs are analyzed for the first time. The first two splits are In0.53Ga0.47As devices with a 3-nm HfO2/1-nm Al2O3 and a 2-nm HfO2/1-nm Al2O3, while the last one ...
Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
(Ieee, 2019-01-01)
In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness ...