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A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2021-03-18)
In this work, SnO2 nanowires (NW) were grown by the Vapor-Liquid-Solid (VLS) method and used to build single NW FET devices. As-grown samples went through structural and morphological analysis and seven single NW devices ...
Diseño y calibración de un Front-End analógico con fotomultiplicadores de silicio para detectores de rayos cósmicos.
(Escuela de Posgrado - Facultad Regional Buenos Aires, 2021)
Cluster Expansion Failings When Applied To Semiconductor Superlattices
(Wiley-VCH Verlag, 2007)
Temporal Noise Analysis And Measurements Of Cmos Active Pixel Sensor Operating In Time Domain
(IEEE Computer Society, 2013)