Actas de congresos
High Performance Active Pixel Sensors Fabricated In A Standard 2.0 μm Cmos Technology
Registro en:
Proceedings Of The Ieee International Caracas Conference On Devices, Circuits And Systems, Iccdcs. , v. , n. , p. 276 - 280, 2004.
15416275
2-s2.0-28444488915
Autor
Mestanza S.N.M.
Jimenez H.G.
IFSilva
Diniz J.A.
Doi I.
Swart J.W.
Institución
Resumen
This paper reports the development of a CMOS Active Pixel sensor using a good performance readout circuit. The sensor element is a photodiode implemented with n-well. Using a CMOS process based on the 2μm technology, the sensor was entirely developed in our research center. The parameters used in the CMOS process were SiO2 thickness of Tox= 30nm, junction depths (X Jn and XJp) of 0.45μm and gate of n+ poli-Si. Under this conditions threshold voltages of Vtn=0.8V and Vtp=-0.7V were obtained for VDS=0.1V. Each detector pixel in the array occupies a 130×130μm2 area with a fill-factor ∼22%, consumed power for pixel ∼2mW, dark current density 3μA/cm 2 in 25°C. Pspice simulated results are in agreement with the experimental measurements in our APS structures under different illumination levels. © 2004 IEEE.
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