The characterization of an active pixel sensor (APS) fabricated with the 2μm CMOS process entirely developed in the Center of Semiconductor Components of UNICAMP is presented. The transistors were manufactured with channel length and width of L=2 μm and W=10 μm, respectively. The CMOS process parameters used were: gate SiO2 thickness of 30nm, junction depths (X Jn and XJp) of 0.45μm and gate of Si-poly n +. The obtained threshold voltages were Vtn=0.8V and Vtp=-0.7V for n and p MOSFETS, respectively. The photodetectors are n+-diodes on a p-type substrate with the same junction depth of Xjn=0.45μm. The fill-factor is about 44% and consumed power for pixel is roughly 2mW. The devices show responsivity peaks (38 mA/W) located around 500 nm. Measurements of the photocurrent show a linear relation with the light optical power. When operated at a reverse bias of 5.0 V, the photodetector achieve a dark current density of μA/cm2 at 25°C, and a gain factor Γ= 0.03 μV/e. These results are in good agreement with those found in the literature.PV 2005-08 3238Possum, E.R., (1997) IEEE Trans. Electron Devices, 44 (10), p. 1689Mendis, S.K., Kemeny, S.E., Gee, R.C., Pain, B., Staller, C.O., Kim, Q., Possum, E.R., (1997) IEEE J. Solid-state Circuits, 32 (2), p. 187Furumiya, M., Ohkubo, H., Muramatsu, Y., Kurosawa, S., Okamoto, F., Fujimoto, Y., Nakashiba, Y., (2001) IEEE Trans. Electron Devices, 48 (10), p. 2221www.machinevisionline.orgwww.micron.comBoyle, W.S., Smith, G.E., (1970) The Bell System Technical Journal, 49 (4), p. 587Lulé, T., Benthien, S., Keller, H., Mutze, F., Rieve, P., Seibel, K., Sommer, M., Bohm, M., (2000) IEEE Trans. Electron Devices, 47 (11), p. 2110Jimenez, H.G., Pavanello, M.A., Swart, J.W., Doi, I., Diniz, J.A., Project and development of na educational CMOS process (2001) XVI SBMicro-international Conference on Microelectronic and Packaging-pirenopolis, , GO-Brazil-setMark, E., (1993) Suprem-IV.GS, , edited by S. E. Hansen and M. D. Deal (Stanford University, California)Yu, Z., Chen, D., So, L., Dutton, R., (1994) PISCES-2ET-2D Device Simulator for Si and Heterostructures, , Stanford University, CaliforniaSchroder, D.K., (1990) Semiconductor Material and Device Characterization, , Arizona State University, John WileyCavadore, C., (1998) Conception et Caracterisation de Capteurs D'images À Pixel Actifs CMOS-APS, p. 125. , Ph.D Thesis, Université Paul Sabatier, Toulouse