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Unusual effects of nanowire-nanowire junctions on the persistent photoconductivity in SnO2 nanowire network devices
(2021-01-01)
The persistent photoconductivity (PPC) effect is a commonly observed behavior in SnO2 nanostructures. Here we described and studied this effect through a comparative study, based on measurements of electronic transport ...
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
(2021-10-01)
In this work, we report the effects of Sb doping on the optical and electrical properties of the SnO2 nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for ...
A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2021-03-18)
In this work, SnO2 nanowires (NW) were grown by the Vapor-Liquid-Solid (VLS) method and used to build single NW FET devices. As-grown samples went through structural and morphological analysis and seven single NW devices ...
Localized Charge Transfer Process And Surface Band Bending In Methane Sensing By Gan Nanowires
(AMER CHEMICAL SOCWASHINGTON, 2015)
Nanofios de germânio : síntese, caracterização estrutural, propriedades elétricas e aplicações
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2016-08-09)
The element germanium is part of the history of electronic equipment based on semiconductor
from its early days with the invention of the transistor, until today with current research
related to growth of germanium ...
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs
(2021-10-01)
The low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet (NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking account of the impact of the device architecture, ...
Development of seminconductor nanowire materials for electronic and photonics applications
(Universidade Federal de São CarlosUFSCarPrograma de Pós-Graduação em Física - PPGFCâmpus São Carlos, 2019-12-05)
The thesis is concerned with study of GaAs nanowires fabricated on Si substrate.
The possibility of growing III-V semiconductor materials directly on silicon in the
form of nanowires is an attractive route to the integration ...
Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene
(Spie-int Soc Optical Engineering, 2018-01-01)
We investigate the formation of GaN nanowires in plasma-assisted molecular beam epitaxy on epitaxial graphene prepared on SiC(0001) using the surface graphitization method in an inductively heated furnace. The pristine ...
Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective?
(Ieee, 2020-01-01)
This work reviews the low-frequency noise performance of different flavors of silicon Gate-All-Around Nanowire (NW) (or Nanosheet - NS) transistors. For the horizontal devices, the 1/f-like noise is dominated by the number ...
Influence of the metastable state (V 0++) on the electronic properties of SnO2nanowires under the influence of light
(2020-09-21)
In general, the properties of oxide materials are directly related to the formation of defects in their structure. In this work, a correlation between the intrinsic defects of SnO2 nanowires with their optoelectronic and ...