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Mostrando ítems 1-10 de 2029
Electronic properties of Fibonacci and random Si–Ge chains
(IOP Publishing, 2020)
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data
(Iop Publishing Ltd, 2020-09-01)
In this paper operational transconductance amplifiers (OTA) were designed with nanowire (NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) and compared with NW Si MOSFET devices. ...
PHOTOREFLECTANCE IN GE/GE0.7SI0.3 STRAINED-LAYER SUPERLATTICES
(American Physical SocCollege PkEUA, 1992)
Evolution of thermodynamic potentials in closed and open nanocrystalline systems: Ge-Si : Si(001) islands
(Amer Physical SocCollege PkEUA, 2008)
Electron spin resonance g shift in Gd5Si4, Gd5Ge4, and Gd5.09Ge2.03Si1.88
(American Physical SocCollege PkEUA, 2006)
Ge-Si and Ga-Al fractionation in Hawaiian volcanic rocks
(Geochimica et Cosmochimica ActaBrasil, 1978)
Ge and Ga abundances in 19 petrologically and geochemically well-documented Hawaiian volcanic rocks were determined simultaneously by radiochemical neutron activation analysis. The data demonstrate a close affinity of Ga ...
On the cross-over between 2-dimensional and 3-dimensional growth in Si/Ge-n/Si quantum wells
(Pergamon-elsevier Science LtdOxfordInglaterra, 1998)