Artículos de revistas
On the cross-over between 2-dimensional and 3-dimensional growth in Si/Ge-n/Si quantum wells
Registro en:
Solid State Communications. Pergamon-elsevier Science Ltd, v. 107, n. 7, n. 359, n. 362, 1998.
0038-1098
WOS:000074907100009
10.1016/S0038-1098(98)00222-1
Autor
Narvaez, GA
Araujo-Silva, MA
Cerdeira, F
Bean, JC
Institución
Resumen
We report Raman scattering and low temperature photoluminescence measurements performed on a series of Molecular-Beam-Epitaxy-grown Si/Ge-n/Si quantum wells with n varying from 3 to 6. Our results are consistent with a gradual evolution of the Si/Ge interface which starts with Ge segregation and formation of terraces for low Ge coverage, to smooth 2-dimensional Ge layers, bounded by interfacial alloy layers, for coverages superior to 4-monolayers. (C) 1998 Elsevier Science Ltd. All rights reserved. 107 7 359 362