Artículos de revistas
PHOTOREFLECTANCE IN GE/GE0.7SI0.3 STRAINED-LAYER SUPERLATTICES
Registro en:
Physical Review B. American Physical Soc, v. 46, n. 23, n. 15263, n. 15269, 1992.
0163-1829
WOS:A1992KG30600035
10.1103/PhysRevB.46.15263
Autor
RODRIGUES, PAM
CERDEIRA, F
BEAN, JC
Institución
Resumen
We report low-temperature (77 K) photoreflectance measurements in two Ge/Ge0.7Si0.3 strained-layer superlattices, in the photon energy range 0.8-1.8 eV. The multiple lines observed in our spectra in this energy region can be consistently explained in terms of quantum confinement of zone-center bulk Ge states. Quantitative agreement is obtained when energy-dependent masses are used for the electrons and light-hole states within a scalar three-band model. This interpretation leads to values of the average valence-band offsets in good agreement with previous ab initio theoretical calculations. 46 23 15263 15269