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Mostrando ítems 1-10 de 25
Análisis comparativo del nivel de defectuosidad en los dispositivos de potencia SiC n-MOSFETs.
(Escuela Superior Politécnica de Chimborazo, 2019-12-25)
Currently, the field-effect transistors (MOSFETs) manufactured in silicon carbide (SiC) are an emerging technology that is entering the market for power devices, due to
the enormous ben efits of this family of semiconductors ...
Threshold voltage degradation for n-channel 4H-SiC power MOSFETs
(2020-03)
In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide semiconductor field electric transistor MOSFETs was evaluated using devices manufactured from two different manufacturers. ...
Distorção harmônica entre os MOSFETs implementados com os estilos de leiaute do tipo diamante híbrido e convencionais
(Centro Universitário FEI, São Bernardo do Campo, 2020)
Modelo de cálculo de perdas por comutação e método de seleção de tecnologias de transistores FET aplicados a conversores estáticos
(Universidade Federal de Santa MariaBrasilEngenharia ElétricaUFSMPrograma de Pós-Graduação em Engenharia ElétricaCentro de Tecnologia, 2020-02-07)
This dissertation presents an analytical model to assist in the calculation of switching losses and
a methodology for selecting MOSFETs that with breakdown voltages greater than 100 V. The
model was developed based on ...