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Geometry effects on the electronic properties of multi-open dots structures
(Ieee-inst Electrical Electronics Engineers Inc, 1998-11-01)
In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among ...
Geometry effects on the electronic properties of multi-open dots structures
(Ieee-inst Electrical Electronics Engineers Inc, 2015)
Geometry effects on the electronic properties of multi-open dots structures
(Ieee-inst Electrical Electronics Engineers Inc, 2015)
Optimal control of a charge qubit in a double quantum dot with a Coulomb impurity
(Elsevier Science, 2017-02)
We study the efficiency of modulated external electric pulses to produce efficient and fast charge localization transitions in a two-electron double quantum dot. We use a configuration interaction method to calculate the ...
Spin-orbit effects in nanowire-based wurtzite semiconductor quantum dots
(American Physical Society, 2013-07-03)
We study the effect of the Dresselhaus spin-orbit interaction on the electronic states and spin relaxation rates of cylindrical quantum dots defined on quantum wires having wurtzite lattice structure. The linear and cubic ...
Few-electron semiconductor quantum dots with Gaussian confinement
(De Gruyter, 2009-03-08)
We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons ...
Restricted and unrestricted Hartree–Fock approaches applied to spherical quantum dots in a magnetic field
(2006)
The Roothaan and Pople–Nesbet approaches for real atoms are adapted to quantum dots in the presence of a magnetic field. Single-particle Gaussian basis sets are constructed, for each dot radius, under the condition of ...
Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures
(American Institute of Physics - AIPCollege Park, 2013-01)
The thermally induced redistribution of carriers between quantum well (QW) and quantum dot (QD) layers in a hybrid dot-well system composed of InAs QDs and an InGaAs QW is studied by means of photoluminescence (PL) ...