Artículos de revistas
Few-electron semiconductor quantum dots with Gaussian confinement
Fecha
2009-03-08Registro en:
Gomez, Sergio Santiago; Romero, Rodolfo Horacio; Few-electron semiconductor quantum dots with Gaussian confinement; De Gruyter; Central European Journal of Physics; 7; 1; 8-3-2009; 12-21
1895-1082
1644-3608
CONICET Digital
CONICET
Autor
Gomez, Sergio Santiago
Romero, Rodolfo Horacio
Resumen
We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.