Geometry effects on the electronic properties of multi-open dots structures

Fagotto, EAM; Rossi, S. M.; Moschim, E.

Artigo

Registro en:

http://dx.doi.org/10.1109/16.726657

Ieee Transactions On Electron Devices. New York: Ieee-inst Electrical Electronics Engineers Inc, v. 45, n. 11, p. 2361-2364, 1998.

0018-9383

http://hdl.handle.net/11449/117065

10.1109/16.726657

WOS:000076754800015

https://repositorioslatinoamericanos.uchile.cl/handle/2250/8766550

Autor

Fagotto, EAM

Rossi, S. M.

Moschim, E.

Institución

Universidade Paulista Júlio de Mesquita Filho (Brasil)

Resumen

In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises.

State Univ Campinas, Sch Elect & Comp Engn, BR-1308197 Campinas, Brazil

Materias

quantum dots

quantum effect semiconductor devices

quantum wires

resonant tunneling devices

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