Buscar
Mostrando ítems 1-10 de 133
Simulation of non-volatile memory cell using chalcogenide glasses
(Elsevier Science Sa, 2012-09)
In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based ...
A model for non-volatile electronic memory devices with strongly correlated materials
(Elsevier Science Sa, 2005)
Nonvolatile memories
(2018-01-01)
The need for faster, smaller, cheaper and energy-efficient electronic devices has been growing continuously in the last decade, with the conventional data storage technologies (i.e., static random access memory and dynamic ...
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
(Institute of Electrical and Electronics Engineers, 2014-01-13)
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual ...
NV-PhTM: An efficient phase-based transactional system for non-volatile memory
(2020-01-01)
Non-Volatile Memory (NVM) is an emerging memory technology aimed to eliminate the gap between main memory and stable storage. Nevertheless, today’s programs will not readily benefit from NVM because crash failures may ...
Strong electron correlation effects in nonvolatile electronic memory devices
(American Institute of Physics, 2006-12)
We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of ...
Germanium Nanoparticles Grown At Different Deposition Times For Memory Device Applications
(ELSEVIER SCIENCE SALAUSANNE, 2016)
Germanium Nanoparticles Grown At Different Deposition Times For Memory Device Applications
(Elsevier Science SALausanne, 2016)
Non-volatile resistive switching in the dielectric superconductor YBa 2Cu3O7-δ
(IOP Publishing, 2009-01)
We report on the reversible, non-volatile and polarity-dependent resistive switching between superconductor and insulator states at the interfaces of an Au/YBa2Cu3O7-δ (YBCO)/Au system. We show that, upon application of ...