The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases.Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; ArgentinaFil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados UnidosFil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina