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Simulation of non-volatile memory cell using chalcogenide glasses
(Elsevier Science Sa, 2012-09)
In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based ...
A model for non-volatile electronic memory devices with strongly correlated materials
(Elsevier Science Sa, 2005)
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
(Institute of Electrical and Electronics Engineers, 2014-01-13)
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual ...
NV-PhTM: An efficient phase-based transactional system for non-volatile memory
(2020-01-01)
Non-Volatile Memory (NVM) is an emerging memory technology aimed to eliminate the gap between main memory and stable storage. Nevertheless, today’s programs will not readily benefit from NVM because crash failures may ...
Evaluation of system-level impacts of a persistent main memory architecture
(Pontifícia Universidade Católica do Rio Grande do SulPorto Alegre, 2012)
Por cerca de 30 anos, os sistemas de memória computacional têm sido essencialmente os mesmos: tecnologias de memória volátil de alta velocidade como SRAM e DRAM utilizadas para caches e memória principal; discos magnéticos ...
Evaluation of system-level impacts of a persistent main memory architecture
(Pontifícia Universidade Católica do Rio Grande do SulPorto Alegre, 2012)
Por cerca de 30 anos, os sistemas de memória computacional têm sido essencialmente os mesmos: tecnologias de memória volátil de alta velocidade como SRAM e DRAM utilizadas para caches e memória principal; discos magnéticos ...
Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices
(Springer, 2012-12)
In this paper we present an analytical simulation study of Non-volatile MOSFET memory devices with Ag/Au nanoparticles/fullerene (C60) embedded gate dielectric stacks. We considered a long channel planar MOSFET, having a ...
Non-volatile resistive switching in the dielectric superconductor YBa 2Cu3O7-δ
(IOP Publishing, 2009-01)
We report on the reversible, non-volatile and polarity-dependent resistive switching between superconductor and insulator states at the interfaces of an Au/YBa2Cu3O7-δ (YBCO)/Au system. We show that, upon application of ...
Eutectic Sb7.4Te92.6 thin film for non-volatile phase-change memories
(Emerald, 2019-10)
Purpose: The purpose of this paper is to investigate the structure and electrical properties of eutectic Sb7.4Te92.6 as made thin films to evaluate their potentiality for application to non-volatile phase-change memories. ...