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Unusual effects of nanowire-nanowire junctions on the persistent photoconductivity in SnO2 nanowire network devices
(2021-01-01)
The persistent photoconductivity (PPC) effect is a commonly observed behavior in SnO2 nanostructures. Here we described and studied this effect through a comparative study, based on measurements of electronic transport ...
Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method
(2021-10-01)
In this work, we report the effects of Sb doping on the optical and electrical properties of the SnO2 nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for ...
Spontaneous Periodic Diameter Oscillations in InP Nanowires: The Role of Interface Instabilities
(Amer Chemical SocWashingtonEUA, 2013)
Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors
(2020-04-24)
This article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through ...
Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
(Ieee, 2019-01-01)
This paper shows the influence of channel width (W-NW) and channel length (L) on intrinsic voltage gain (A(V)) and on unit-gain frequency (f(t)) of omega-gate nanowire SOI MOSFET. The f(t) is calculated taking into ...
Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
(2019-08-01)
This paper shows the influence of channel width (WNW) and channel length (L) on intrinsic voltage gain (AV) and on unit-gain frequency (ft) of omega-gate nanowire SOI MOSFET. The ft is calculated taking into consideration ...
Back gate bias influence on SOI Ω-gate nanowire down to 10 nm width
(2017-01-03)
We investigate for the first time the influence of the back gate bias (VB) in the main digital and analog parameters on Silicon-On-Insulator (SOI) omega-gate nanowire devices down to 10 nm width (W). For wider channel, it ...
Back gate bias influence on SOI Omega-gate nanowire down to 10 nm width
(Ieee, 2016-01-01)
We investigate for the first time the influence of the back gate bias (V-B) in the main digital and analog parameters on Silicon-On-Insulator (SOI) omega-gate nanowire devices down to 10 nm width (W). For wider channel, ...
The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
(2017-11-15)
The goal of this work is analyze for the first time the low-energy proton irradiation elfects on p and n-channel SOI Ω-Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight ...
The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
(Ieee, 2017-01-01)
the goal of this work is analyze for the first time the low-energy proton irradiation effects on p and n- channel SOI Omega - Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed ...