Actas de congresos
The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
Fecha
2017-01-01Registro en:
2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands. New York: Ieee, 4 p., 2017.
WOS:000426524500053
0496909595465696
0000-0002-0886-7798
Autor
Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
CEA
Univ Grenoble Alpes
Institución
Resumen
the goal of this work is analyze for the first time the low-energy proton irradiation effects on p and n- channel SOI Omega - Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.