Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs

Abstract

This paper shows the influence of channel width (W-NW) and channel length (L) on intrinsic voltage gain (A(V)) and on unit-gain frequency (f(t)) of omega-gate nanowire SOI MOSFET. The f(t) is calculated taking into consideration the experimental gate capacitance. The device showed excellent electrostatic control for the W-NW of 10 nm, which improved transconductance, consequently, improving both A(V) and f(t). This technology showed values of A(V) around 80 dB and a f(t) of over 200 GHz, proving that this device is an excellent for future analog applications like 5G communications and Internet-of-Things (IoT).