Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs su bstrates. The metal­ contact structure consists of a gold-based-alloy /Pd/semiconductor-substrate. Characteristics of the ...

En este trabajo se fabricaron dispositivos basados en silicio poroso nanoestructurado, con el fin de estudiar y caracterizar sus propiedades de transporte eléctrico, buscando acumular datos que permitan en un futuro ...

RESUMEN En el presente trabajo, se ha realizado un estudio del comportamiento Voltaje – Corriente de las uniones metal – semiconductor en el estado superconductor. Se obtuvo la densidad de corriente total, J, en el punto ...

A simple model is developed for the admittance of a metal-insulator-semiconductor (MIS) capacitor which includes the effect of a guard ring surrounding the Ohmic contact to the semiconductor. The model predicts most of the ...

Motivated by the recent synthesis of a PtSe2 monolayer by direct selenization of a Pt(1 1 1) substrate and in order to reproduce ARPES experimental results, we investigate if the PtSe2 film could have grown directly on top ...

We study the electrical characteristics of metal-semiconductor-metal HfO2_x-based devices where both metal-semiconductor interfaces present bipolar resistive switching. The device exhibits an unusual current-voltage ...