PRESENTAMOS UN NUEVO MÉTODO PARA CALCULAR LA FUERZA TERMOELECTROMOTRIZ EN SEMICONDUCTORES BIPOLARES DENTRO DE LA APROXIMACIÓN LINEAL A LA TEORÍA, TOMANDO EN CUENTA LOS PORTADORES DE CARGA FUERA DEL EQUILIBRIO GENERADOS EN LA MUESTRA TRAS APLICAR UN CAMPO DE TEMPERATURA. POR PRIMERA VEZ SE DEFINE CON PRECISIÓN CUALES SON LOS PORTADORES DE CARGA FUERA DEL EQUILIBRIO Y COMO DEBE ESCRIBIRSE LA ECUACIÓN DE POISSON PARA TOMARLOS EN CUENTA. TAMBIÉN POR PRIMERA VEZ SE TOMÓ EN CUENTA EL TÉRMINO PROPORCIONAL AL CAMBIO DE TEMPERATURA LOCAL PRODUCIDO POR EL GRADIENTE DE TEMPERATURA APLICADO EN LA EXPRESIÓN PARA LA RECOMBINACIÓN VOLUMÉTRICA PARA CALCULAR LA FUERZA TERMOELECTROMOTRIZ, DANDO POR RESULTADO QUE ÉSTA Y LA RESISTENCIA DEL SEMICONDUCTOR DEPENDEN NO SÓLO DE LOS PARÁMETROS TRADICIONALES COMO LAS CONDUCTIVIDADES ELÉCTRICAS Y POTENCIAS TERMOELÉCTRICAS DE ELECTRONES Y HUECOS, SINO TAMBIÉN DE LAS TASAS DE RECOMBINACIÓN VOLUMÉTRICA Y SUPERFICIAL.AbstractWE PRESENT A NEW METHOD FOR CALCULATING THE THERMOELECTROMOTIVE FORCE IN BIPOLAR SEMICONDUCTORS WITHIN THE LINEAR APPROXIMATION TO THE THEORY, TAKING INTO ACCOUNT THE NON-EQUILIBRIUM CHARGE CARRIERS GENERATED IN THE SAMPLE WHEN THE TEMPERATURE FIELD IS APPLIED. FOR THE FIRST TIME IT IS PRECISELY DEFINED WHICH ARE THE NON-EQUILIBRIUM CHARGE CARRIERS AND HOW TO WRITE THE POISSON EQUATION TO TAKE THEM INTO ACCOUNT. FOR THE FIRST TIME IT IS TAKEN INTO ACCOUNT THE TERM THAT IS PROPORTIONAL TO THE LOCAL CHANGE IN TEMPERATURE PRODUCED BY THE GRADIENT OF TEMPERATURE, IN THE EXPRESSION FOR THE RECOMBINATION RATE TO CALCULATE THE THERMOELECTROMOTIVE FORCE GIVEN THE RESULT THAT THIS AND THE SEMICONDUCTOR´S RESISTANCE DO NOT DEPEND SOLELY ON TRADITIONAL PARAMETERS SUCH AS ELECTRIC CONDUCTIVITIES AND THERMOELECTRIC POWERS OF ELECTRONS AND HOLES, BUT DO DEPEND ALSO ON SURFACE AND BULK RECOMBINATION RATES AS WELL.WE PRESENT A NEW METHOD FOR CALCULATING THE THERMOELECTROMOTIVE FORCE IN BIPOLAR SEMICONDUCTORS WITHIN THE LINEAR APPROXIMATION TO THE THEORY, TAKING INTO ACCOUNT THE NON-EQUILIBRIUM CHARGE CARRIERS GENERATED IN THE SAMPLE WHEN THE TEMPERATURE FIELD IS APPLIED. FOR THE FIRST TIME IT IS PRECISELY DEFINED WHICH ARE THE NON-EQUILIBRIUM CHARGE CARRIERS AND HOW TO WRITE THE POISSON EQUATION TO TAKE THEM INTO ACCOUNT. FOR THE FIRST TIME IT IS TAKEN INTO ACCOUNT THE TERM THAT IS PROPORTIONAL TO THE LOCAL CHANGE IN TEMPERATURE PRODUCED BY THE GRADIENT OF TEMPERATURE, IN THE EXPRESSION FOR THE RECOMBINATION RATE TO CALCULATE THE THERMOELECTROMOTIVE FORCE GIVEN THE RESULT THAT THIS AND THE SEMICONDUCTOR'S RESISTANCE DO NOT DEPEND SOLELY ON TRADITIONAL PARAMETERS SUCH AS ELECTRIC CONDUCTIVITIES AND THERMOELECTRIC POWERS OF ELECTRONS AND HOLES, BUT DO DEPEND ALSO ON SURFACE AND BULK RECOMBINATION RATES AS WELL.