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Ultra-Thin Depleted Silicon On Insulator MOSFET: a simulation based on COMSOL MultiphysicsSilicio Ultradelgado Empobrecido en Aislante MOSFET: una simulación basada en COMSOL Multiphysics®
(USFQ PRESS, departamento editorial de la Universidad San Francisco de Quito USFQ, 2012)
Exploración de dispositivos MOSFET usando COMSOL multiphysics
(Quito: USFQ, 2012, 2013)
Estudo dos estilos de leiaute não convencionais para mosfets planares em altas temperaturas considerando-se o nó tecnológico de 180nm
(Centro Universitário FEI, São Bernardo do Campo, 2022)
Self-consistent dc, ac, noise and mismatch models of the mosfet
(2004)
This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, consistent dc, ...
Estudo dos estilos de leiaute não convencionais para mosfets planares em altas temperaturas considerando-se o nó tecnológico de 180nm
(Centro Universitário FEI, São Bernardo do Campo, 2021)
Esta tese de doutorado teve por objetivo estudar os impactos no desempenho elétrico dos transistores de efeito de campo Metal-Óxido-Semicondutor (Metal-Oxide-Semiconductor (MOS) Field Effect Transistors, MOSFETs) implementados ...
Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
(2019-01-05)
MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs ...
Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
(2019-01-05)
MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs ...
Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
(2020-01-01)
This work presents an experimental analysis of the Negative-Bias-Temperature-Instability (NBTI) on omegagate nanowire (NW) pMOSFETS transistors and the trends analysis from simulations, focusing on the influence of channel ...
OTA Performance Comparison Designed with Experimental NW-MOSFET and NW-TFET Devices
(2019-10-14)
This paper presents, for the first time, the performance of an Operational Transconductance Amplifier (OTA) designed with the experimental data of Nanowire (NW) Si-Tunnel-FET compared to NW MOSFET devices. The experimental ...
Verification of angular dependence in mosfet detector
(Associa????o Brasileira de Energia Nuclear, 2018)