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An active leakage-injection scheme applied to low-voltage SRAMs
(2003-07-14)
An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective ...
An active leakage-injection scheme applied to low-voltage SRAMs
(2003-07-14)
An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective ...
n-Channel Bulk and DTMOS FinFETs: Investigation of GIDL and Gate Leakage Currents
(Ieee, 2016-01-01)
In this work GIDL (Gate Induced Drain Leakage) and Gate Leakage Currents (I-G) have been experimentally investigated for different dimensions of Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS) in ...
n-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents
(2016-11-02)
In this work GIDL (Gate Induced Drain Leakage) and Gate Leakage Currents (Ig) have been experimentally investigated for different dimensions of Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS) in ...
Diagnostic of Silicon Carbide Surge Arresters using Leakage Current Measurement
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2011)
Nowadays, the zinc oxide surge arresters (ZnO) are widely used in power systems, however, a large number of silicon carbide surge arresters (SiC) are still in service in the utilities. On the other hand, it is not possible ...
Theoretical and experimental study of electrochemical reactors with three-dimensional bipolar electrodes
(Springer, 2010-03)
A mathematical model to represent three-dimensional bipolar electrodes is proposed taken into account the leakage current. The model is analytically solved when the electrochemical reaction has a mass-transfer control at ...