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Light scattering and atomic force microscopy study of InAs island formation on InP
(Amer Inst PhysicsWoodburyEUA, 2000)
The influence of different indium-composition profiles on the electronic structure of lens-shaped InxGa1-xAs quantum dots
(IOP PUBLISHING LTDBRISTOL, 2012)
We present effective-mass calculations of the bound-state energy levels of electrons confined inside lens-shaped InxGa1-xAs quantum dots (QDs) embedded in a GaAs matrix, taking into account the strain as well as the In ...
STRAIN-MEASUREMENTS IN INXGA1-XAS GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE
(Academic Press LtdLondonInglaterra, 1993)
OPTICAL STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
(American Physical SocCollege PkEUA, 1988)
Impact of the Zn diffusion process at the source side of InXGa1-XAs nTFETs on the analog parameters down to 10 K
(Ieee, 2017-01-01)
In this work, the impact of the Zn diffusion processes in the source and the amount of Indium for InxGa1-xAs nTFET was analyzed, focusing on the basic analog parameters. Three different splits were analyzed: In0.53Ga0.47As ...
Impact of the Zn diffusion process at the source side of InxGa1-xAs nTFETs on the analog parameters down to 10 K
(2018-03-07)
In this work, the impact of the Zn diffusion processes in the source and the amount of Indium for InxGa1-xAs nTFET was analyzed, focusing on the basic analog parameters. Three different splits were analyzed: In0.53Ga0.47As ...
STRAIN DETERMINATION IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE
(Amer Inst PhysicsWoodbury, 1993)