Artículos de revistas
STRAIN DETERMINATION IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE
Registro en:
Journal Of Applied Physics. Amer Inst Physics, v. 73, n. 7, n. 3266, n. 3270, 1993.
0021-8979
WOS:A1993KV03100021
10.1063/1.352973
Autor
INOKI, CK
LEMOS, V
CERDEIRA, F
VASQUEZLOPEZ, C
Institución
Resumen
A series of Raman and photoreflectance measurements was performed on several InxGa1-xAs/GaAs strained-layer superlattices of the same period but of different alloy compositions and substrate orientations. In the photoreflectance spectra the photon energy region containing the E1 and E1 + DELTA1 transitions of the GaAs barrier material is analyzed. Both types of measurements are used in order to estimate of the in-plane strain in these layers. The values obtained by both methods are in good mutual agreement, thus showing that photoreflectance is an effective method for strain determination. 73 7 3266 3270