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Mostrando ítems 1-10 de 48
Self-assembled islands on strained systems: Control of formation, evolution, and spatial distribution
(American Physical SocCollege PkEUA, 1998)
Espalhamento de raios-X em ilhas auto-construídas de InAs
(Universidade Federal de Minas GeraisUFMG, 2002-01-03)
In this work several structural and chemical properties of self-assembled InAs islands grown on GaAs(001) are studied using surface x-ray scattering with synchrotron radiation. The technique of x-ray diffraction under ...
Light scattering and atomic force microscopy study of InAs island formation on InP
(Amer Inst PhysicsWoodburyEUA, 2000)
Vertical stacks of InAs quantum wires in an InP matrix
(Elsevier Science BvAmsterdamHolanda, 2003)
On the onset of InAs islanding on InP: influence of surface steps
(Elsevier Science BvAmsterdamHolanda, 1997)
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
(Amer Inst PhysicsMelvilleEUA, 2003)
Nanomembranas Semicondutoras: uma nova plataforma para a investigação de fenômenos estruturais e eletrônicos
(Universidade Federal de Minas GeraisUFMG, 2018-06-11)
In this thesis we present a study of the structural and electronic properties of semiconductor heterostructures, released from their original substrate. The investigated systems were prepared with InAs quantum points grown ...
Study of growth properties of InAs islands on patterned InP substrates defined by focused ion beam
(Universidade Federal de Minas GeraisBrasilICX - DEPARTAMENTO DE FÍSICAUFMG, 2016)
Role of group V exchange on the shape and size of InAs/InP self-assembled nanostructures
(Amer Inst PhysicsMelvilleEUA, 2002)