Study of growth properties of InAs islands on patterned InP substrates defined by focused ion beam

Artigo de Periódico

Fecha

2016

Registro en:

https://doi.org/10.1016/j.physe.2016.11.011

1873-1759

http://hdl.handle.net/1843/50733

https://orcid.org/0000-0002-8703-4283

https://orcid.org/0000-0001-5319-4652

https://orcid.org/0000-0003-0195-444X

https://orcid.org/0000-0001-5565-1618

https://orcid.org/0000-0001-9664-0181

https://repositorioslatinoamericanos.uchile.cl/handle/2250/6678742

Autor

Rodrigo Ribeiro de Andrade

Ângelo Malachias de Souza

Douglas Rodrigues Miquita

Thiago de Lourenço e Vasconcelos

Rudy Massami Sakamoto Kawabata

Maurício Pamplona Pires

Patrícia Lustoza de Souza

Wagner Nunes Rodrigues

Institución

Universidade Federal de Minas Gerais (Brasil)

Materias

X-ray diffraction

Metal-organic vapor phase epitaxy

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