We have studied the influence of Group V overpressure on the final shape and size of InAs nanostructures grown on (001) InP substrates. The mechanisms leading to postgrowth modifications in the InAs nanostructures are discussed. The simultaneous action of Group V overpressure and stress field-produced by the InAs nanostructures-can induce strong material transport. The direction of this material net current depends on the type of Group V element used for the overpressure flux. In situ reflection high-energy electron diffraction, atomic force microscopy, and transmission electron microscopy measurements were used to characterize the transitions in morphology. Our results show that morphological studies considering the grown surface that do not take into account postgrowth processes can be misleading to understand the growth mechanisms governing the self-assembling process. (C) 2002 American Institute of Physics.921275237526