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Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
(Ieee, 2019-01-01)
This paper shows the influence of channel width (W-NW) and channel length (L) on intrinsic voltage gain (A(V)) and on unit-gain frequency (f(t)) of omega-gate nanowire SOI MOSFET. The f(t) is calculated taking into ...
Intrinsic voltage gain and unit-gain frequency of omega-gate nanowire SOI MOSFETs
(2019-08-01)
This paper shows the influence of channel width (WNW) and channel length (L) on intrinsic voltage gain (AV) and on unit-gain frequency (ft) of omega-gate nanowire SOI MOSFET. The ft is calculated taking into consideration ...
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
(2017-02-01)
In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices, with different architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. This analysis is based on the ...
Behavior of triple-gate Bulk FinFETs with and without DTMOS operation
(PERGAMON-ELSEVIER SCIENCE LTDOXFORD, 2012)
In this paper, the combination of the Dynamic Threshold (DT) voltage technique with a non-planar structure is experimentally studied in triple-gate FinFETs. The drain current, transconductance, resistance, threshold voltage, ...
Analysis of omega-gate nanowire soi mosfet under analog point of view
(2020-01-01)
This paper presents an evaluation of omega-gate nanowire n-and p-type SOI MOSFETs performance focusing on the main analog figures of merit, like saturation transcon-ductance (gmsat), output conductance (gD), transconductance ...
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C
(2021-11-01)
In this work, the DC behavior of AlGaN/GaN Metal-Insulator-Semiconductor high electron mobility transistors (MO(I)SHEMTs) with two different gate dielectrics (Al2O3 and Si3N4) is analyzed through the experimental comparison ...
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
(Ieee, 2016-01-01)
This work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount ...
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
(2017-01-03)
This work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount ...
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
(PERGAMON-ELSEVIER SCIENCE LTD, 2008)
This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-K dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is ...
Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures
(2016-09-01)
This paper presents an experimental analysis of the analog application figures of merit: the intrinsic voltage gain (AV) and unit gain frequency, focusing on the performance comparison between silicon triple gate pFinFET ...