Artículos de revistas
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
Fecha
2017-02-01Registro en:
Solid-State Electronics, v. 128, p. 43-47.
0038-1101
10.1016/j.sse.2016.10.021
2-s2.0-85007247104
2-s2.0-85007247104.pdf
0496909595465696
0000-0002-0886-7798
Autor
Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
imec
KULeuven
Institución
Resumen
In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices, with different architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. This analysis is based on the experimental basic analog parameters such as transconductance (gm), output conductance (gD) and intrinsic voltage gain (AV). Although the Line-TFETs present worse AV than the point-TFETs, when they are compared with MOSFET technology, the line-TFET shows a much better intrinsic voltage gain than both MOSFET architectures (FinFET and GAA). Besides the AV, the highest on-state current was obtained for Line-TFETs when compared with other two TFET architectures, which leads to a good compromise for analog application.