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Anomalous lattice parameter of magnetic semiconductor alloys
(AMER INST PHYSICS, 2009)
The addition of transition metals to III-V semiconductors radically changes their electronic, magnetic, and structural properties. We show by ab initio calculations that in contrast to the conventional semiconductor alloys, ...
Ohmic contacts with palladium diffusion barrier on III-V semiconductors
(2012-11-27)
Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs su bstrates. The metal contact structure consists of a gold-based-alloy /Pd/semiconductor-substrate. Characteristics of the ...
Hole concentration in a diluted ferromagnetic semiconductor
(Iop Publishing LtdBristolInglaterra, 2002)
Atomic scale characterization of Mn doped InAs/GaAs quantum dots
(AMER INST PHYSICS, 2010)
Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent ...
Study of optical properties of GaAsN layers preparedby molecular beam epitaxy
(ELSEVIER, 2013-01-16)
Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction
(Amer Inst Physics, 2013-01)
The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin films by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel in situ structural study ...
Stabilization of substitutional Mn in silicon-based semiconductors
(American Physical SocCollege PkEUA, 2004)
Electron g factor anisotropy in asymmetric III???V semiconductor quantum wells
(SEMICONDUCTOR SCIENCE AND TECHNOLOGY (PRINT), 2016-09-27)