Artículos de revistas
Atomic scale characterization of Mn doped InAs/GaAs quantum dots
Fecha
2010Registro en:
APPLIED PHYSICS LETTERS, v.96, n.4, 2010
0003-6951
10.1063/1.3293296
Autor
BOZKURT, M.
GRANT, V. A.
ULLOA, J. M.
CAMPION, R. P.
FOXON, C. T.
MAREGA JUNIOR, Euclydes
SALAMO, G. J.
KOENRAAD, P. M.
Institución
Resumen
Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent segregation makes it difficult to incorporate Mn in the QDs even at low growth temperatures of T=320 degrees C and high Mn fluxes. Mn atoms in and around QDs have been observed with strain and potential confinement changing the appearance of the Mn features.