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Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene
(Spie-int Soc Optical Engineering, 2018-01-01)
We investigate the formation of GaN nanowires in plasma-assisted molecular beam epitaxy on epitaxial graphene prepared on SiC(0001) using the surface graphitization method in an inductively heated furnace. The pristine ...
On the nucleation of GaP/GaAs and the effect of buried stress fields
(2006-08-23)
We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study ...
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy
(Ieee, 2019-01-01)
A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a ...
Device-based threading dislocation assessment in germanium hetero-epitaxy
(2019-08-01)
A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a ...
Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures
(2005-06-20)
Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V ...
On the nucleation of GaP/GaAs and the effect of buried stress fields
(Materials Research Soc, 2006-01-01)
We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study ...
Mechanical Properties Of The Gaas/si [001] Interface By X-rays Hybrid Multiple Diffraction
(Publ by Materials Research Society, Pittsburgh, PA, United States, 1993)
Valence band anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain
(2004-05-17)
We present here the study of the effects of the biaxial tensile strain on the optical properties in GaAs/AlGaAs quantum wells using low-temperature photoluminescence and photoluminescence excitation techniques. We used a ...