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HOLE CONFINEMENT EFFECTS ON MULTIPLE SI DELTA-DOPING IN GAAS
(Amer Inst PhysicsWoodbury, 1992)
ON THE ORIGIN OF FRANZ-KELDYSH OSCILLATIONS IN ALGAAS/GAAS MODULATION-DOPED HETEROJUNCTIONS
(Amer Inst PhysicsWoodbury, 1991)
Raman Studies of Carbon-Doped GaAs Layers Grown by a Metallic-Arsenic-Based Metalorganic Chemical Vapor Deposition System
(2012-12-17)
High-quality p type GaAs epilayers were grown by metalorganic chemical vapor deposition using trimethylgallium
and metallic arsenic as gallium and arsenic sources, respectively. The range of hole concentration analyzed ...
Raman Studies of Carbon-Doped GaAs Layers Grown by a Metallic-Arsenic-Based Metalorganic Chemical Vapor Deposition System
(2012-11-23)
High-quality p type GaAs epilayers were grown by metalorganic chemical vapor deposition using trimethylgallium
and metallic arsenic as gallium and arsenic sources, respectively. The range of hole concentration analyzed ...
Raman Studies of Carbon-Doped GaAs Layers Grown by a Metallic-Arsenic-Based Metalorganic Chemical Vapor Deposition System
(2012-11-26)
High-quality p type GaAs epilayers were grown by metalorganic chemical vapor deposition using trimethylgallium
and metallic arsenic as gallium and arsenic sources, respectively. The range of hole concentration analyzed ...
Thomas-Fermi approximation in two p-type delta-doped quantum wells in GaAs and Si
(Revista Mexicana de Física, 2009)
Optical and structural properties of GaAs highly doped with carbon
(2012-11-27)
This work presents the characterization of p-type GaAs layers highly doped with carbon grown in a metallic-arsenic-based-MOCVD system. The gallium precursor was the compound trimethylgallium (TMG) and elemental ...
Effects of thermally activated hole escape mechanism on the optical and electrical properties in p-type Si delta-doped GaAs(311)A layers
(Amer Physical SocCollege PkEUA, 2000)
Interface conduction and photo-induced electrical transport in the heterojunction formed by GaAs and Ce3+-doped SnO2
(2017-04-01)
Electrical and optical properties of heterojunction composed of GaAs and SnO2 are presented. SnO2 thin film was deposited by sol-gel-dip-coating and doped with Ce3+ whereas the GaAs layer was deposited by resistive evaporation ...