PRESENTAMOS CÁLCULOS DE LA ESTRUCTURA DE SUBBANDAS DE HUECOS, UTILIZANDO LA APROXIMACIÓN DE THOMAS- FERMI PARA DOS POZOS CUÁNTICOS -- DOPADOS TIPO P EN GAAS Y SI, COMO FUNCIÓN DE LA CONCENTRACIÓN DE LAS IMPUREZAS Y DE LA DISTANCIA L ENTRE AMBOS PARA LOS DOS TIPOS DE SISTEMAS. LOS RESULTADOS NUMÉRICOS MUESTRAN QUE PARAUN POZO DOBLE DE BE- - - DOPADO GAAS (POZO DOBLE DE B---DOPADO SI) CON UNA CONCENTRACIÓN DE 1 X 10 - CM -- LOS NIVELES ESTÁN DEGENERADOS PARA L -- 300 A (L - 200 A).AbstractTHOMAS-FERMI CALCULATIONS OF THE HOLE SUBBAND STRUCTURE IN TWO COUPLED P-TYPE --DOPED GAAS AND SI QUANTUM WELLS ARE CARRIED OUT AS A FUNCTION OF THE IMPURITY CONCENTRATION AND THE DISTANCE L BETWEEN THEM. A SIMPLE FORMULA IS OBTAINED FOR THE POTENTIAL AS A FUNCTION OF THESE TWO MAGNITUDES BY BOTH TYPES OF SYSTEMS. THE NUMERICAL RESULTS FOR A DOUBLE BE---DOPED GAAS (DOUBLE B---DOPED SI) QUANTUM WELL SHOW THAT THE ENERGY LEVELS DEGENERATE FOR L -- 300 A (I--200 A) FOR AN IMPURITY CONCENTRATION OF 1 X 10- CM-.THOMAS-FERMI CALCULATIONS OF THE HOLE SUBBAND STRUCTURE IN TWO COUPLED P-TYPE --DOPED GAAS AND SI QUANTUM WELLS ARE CARRIED OUT AS A FUNCTION OF THE IMPURITY CONCENTRATION AND THE DISTANCE L BETWEEN THEM. A SIMPLE FORMULA IS OBTAINED FOR THE POTENTIAL AS A FUNCTION OF THESE TWO MAGNITUDES BY BOTH TYPES OF SYSTEMS. THE NUMERICAL RESULTS FOR A DOUBLE BE---DOPED GAAS (DOUBLE B---DOPED SI) QUANTUM WELL SHOW THAT THE ENERGY LEVELS DEGENERATE FOR L -- 300 A (I--200 A) FOR AN IMPURITY CONCENTRATION OF 1 X 10- CM-.