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n-Channel Bulk and DTMOS FinFETs: Investigation of GIDL and Gate Leakage Currents
(Ieee, 2016-01-01)
In this work GIDL (Gate Induced Drain Leakage) and Gate Leakage Currents (I-G) have been experimentally investigated for different dimensions of Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS) in ...
n-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents
(2016-11-02)
In this work GIDL (Gate Induced Drain Leakage) and Gate Leakage Currents (Ig) have been experimentally investigated for different dimensions of Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS) in ...
Behavior of triple-gate Bulk FinFETs with and without DTMOS operation
(PERGAMON-ELSEVIER SCIENCE LTDOXFORD, 2012)
In this paper, the combination of the Dynamic Threshold (DT) voltage technique with a non-planar structure is experimentally studied in triple-gate FinFETs. The drain current, transconductance, resistance, threshold voltage, ...
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
(Elsevier B.V., 2014-11-01)
In this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced ...
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
(Elsevier B.V., 2015)
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
(Elsevier B.V., 2015)
Avaliação do MOSFET UTBB FD-SOI com SELBOX em configuração DTMOS
(Universidade Estadual Paulista (Unesp), 2020-10-30)
O objetivo principal deste trabalho é o estudo de transistores SOI (Silicon On Insulator) UTBB (Ultra-thin Body and Buried oxide) de canal tipo-n com SELBOX (SELective Buried OXide) em configuração DTMOS (Dynamic Threshold-Voltage ...
Forward bias analysis of the substrate current for a SOI DTMOS
(2009)
[No abstract available]
Forward bias analysis of the substrate current for a SOI DTMOS
(2009)
[No abstract available]