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A Negative-Bias-Temperature-Instability Study on Omega-Gate Silicon Nanowire SOI pMOSFETs
(Ieee, 2019-01-01)
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical ...
A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
(2019-08-01)
The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical ...
Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
(2020-01-01)
This work presents an experimental analysis of the Negative-Bias-Temperature-Instability (NBTI) on omegagate nanowire (NW) pMOSFETS transistors and the trends analysis from simulations, focusing on the influence of channel ...
Inestabilidad debido a polarización y temperatura en circuitos integrados nanométricos
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2016)
Inestabilidad debido a polarización y temperatura en circuitos integrados nanométricos
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2016)
Threshold voltage degradation for n-channel 4H-SiC power MOSFETs
(2020-03)
In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide semiconductor field electric transistor MOSFETs was evaluated using devices manufactured from two different manufacturers. ...