Buscar
Mostrando ítems 1-10 de 1605
Raman scattering from fully strained Ge1 -xSnx (x 0.22) alloys grown on Ge(001) 2 x 1 by low-temperature molecular beam epitaxy
(2012-12-17)
Fully strained single-crystal Ge 1 -xSnx alloys (xo;;;0.22) deposited on Ge(001)2 X 1 by low-temperature molecular beam epitaxy have been studied by Raman scattering. The results are characterized by a ...
Raman scattering from fully strained Ge1 -xSnx (x 0.22) alloys grown on Ge(001) 2 x 1 by low-temperature molecular beam epitaxy
(2012-11-26)
Raman scattering from fully strained Ge1 -xSnx (x 0.22) alloys grown on Ge(001) 2 x 1 by low-temperature molecular beam epitaxy
PHOTOREFLECTANCE IN GE/GE0.7SI0.3 STRAINED-LAYER SUPERLATTICES
(American Physical SocCollege PkEUA, 1992)
Evolution of thermodynamic potentials in closed and open nanocrystalline systems: Ge-Si : Si(001) islands
(Amer Physical SocCollege PkEUA, 2008)