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Electronic properties of semiconductors: introductory remarksPropriedades eletrônicas de semicondutores, uma pequena introdução
(Universidade Federal de Santa Maria, 1992)
Level structure and spin-orbit effects in quasi-one-dimensional semiconductor nanostructures
(American Physical Society, 2005-12)
We investigate theoretically how the spin-orbit Dresselhaus and Rashba effects influence the electronic structure of quasi-one-dimensional semiconductor quantum dots, similar to those that can be formed inside semiconductor ...
Polariton path to fully resonant dispersive coupling in optomechanical resonators
(American Physical Society, 2014-11)
Resonant photoelastic coupling opens new perspectives for strongly enhanced light-sound interaction in semiconductor optomechanical resonators. One potential problem, however, is the reduction of the cavity Q factor induced ...
Hartree-Fock ground state of the two-dimensional electron gas with Rashba spin-orbit interaction
(American Physical Society, 2008-07)
We search for the uniform Hartree-Fock ground state of the two-dimensional electron gas formed in semiconductor heterostructures including the Rashba spin-orbit interaction. We identify two competing quantum phases: a ...
Nanostructured ceramic materials: Applications in gas sensors and solid-oxide fuel cells
(Elsevier Science Sa, 2010-04)
Two applications of nanostructured ceramic materials developed at CINSO in recent years are reviewed, including the synthesis and properties of these materials:(i)Application of nanostructured SnO2-based semiconductors for ...
Effects of intergranular barrier fluctuations on the electrical conductivity of polycrystalline semiconductors
(Elsevier Science, 2018-11-15)
We studied the influence of intergranular barrier fluctuations on the electrical response of 3D semiconductor polycrystals. We first computed with a numerical simulation model the dispersion in the intergranular barrier ...
Spin relaxation near the metal-insulator transition: Dominance of the Dresselhaus spin-orbit coupling
(American Physical Society, 2012-01)
We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived ...
Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors
(American Institute of Physics, 2008-12)
Conditions for reversal of the voltage shift in chemically sensitive metal oxide semiconductor capacitors are surveyed with the pulsed illumination technique in SiSi O2 Me0 capacitors, with annular Pd and Au gates under ...