dc.creatorValencia-Gálvez, P.
dc.creatorBarahona-Huenchumil, Patricia
dc.creatorGaldámez, Antonio
dc.creatorMoris-López, Silvana
dc.date2023-03-08T12:59:21Z
dc.date2023-03-08T12:59:21Z
dc.date2023
dc.date.accessioned2024-05-02T20:30:37Z
dc.date.available2024-05-02T20:30:37Z
dc.identifierhttp://repositorio.ucm.cl/handle/ucm/4484
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/9274728
dc.descriptionHerein, we report the structural characterization and vibrational and physical properties of Cu2ZnSn1−xSixSe4 solid solutions synthesized using the ceramic method. X-ray diffraction analysis and Rietveld analysis of the samples indicated that by increasing the x value from 0 to 0.8, the volume of the unit cell decreased because the ionic radius of silicon is smaller than that of tin. Simultaneously, a phase transition between stannite and wurtz-stannite was observed. The Raman peaks were analyzed by fitting the spectra to identify the vibrational modes by comparison with the experimental data from Cu2ZnSnSe4 and Cu2ZnSiSe4. The spectra of Cu2Zn(Sn1−xSix)Se4 (x = 0.2 and 0.3) show two dominant peaks at approximately 172 and 195 cm−1, which are assigned to the A1 mode of the stannite structure. The optical band gaps for Cu2Zn(Sn0.8Si0.2)Se4 and Cu2Zn(Sn0.2Si0.8)Se4 were 1.30 and 1.74 eV, respectively. These values were intermediate to those of the end members. Electrical properties of Cu2Zn(Sn0.8Si0.2)Se4 revealed p-type conductivity behavior with a carrier concentration of approximately ~+3.50 × 10−19 cm−3 and electrical mobility of 2.64 cm2/V·s.
dc.languageen
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 Chile
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/3.0/cl/
dc.sourceInorganics, 11(1), 7
dc.subjectCZTSe-derivatives
dc.subjectCeramic synthesis;
dc.subjectPhase transition
dc.subjectVibrational properties
dc.subjectPhysical properties
dc.titleCu2Zn(Sn1−xSix)Se4: Structural characterization, vibrational and physical properties of cztse-derivatives
dc.typeArticle


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