Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam

dc.creatorMaia, Ana Figueiredo
dc.creatorMagalhães, Cínthia Marques Magalhães
dc.creatorSantos, Luiz Antonio Pereira dos
dc.creatorSouza, Divanizia do Nascimento
dc.date2013-05-02T18:45:54Z
dc.date2013-05-02T18:45:54Z
dc.date2010-11
dc.date.accessioned2023-09-28T22:59:03Z
dc.date.available2023-09-28T22:59:03Z
dc.identifierMAGALHÃES, C. M. S. et al. Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam. Journal of Physics: Conference Series (Online), v. 249, n. 1, nov, 2010. Disponível em: <http://iopscience.iop.org/1742-6596/249/1/012032/pdf/1742-6596_249_1_012032.pdf>. Acesso em: 2 maio 2013.
dc.identifier1742-6596
dc.identifierhttps://ri.ufs.br/handle/riufs/483
dc.identifierCreative Commons Attribution License
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/9081919
dc.descriptionMOSFET electronic devices have been used for dosimetry in radiology and radiotherapy. Several communications show that due to the radiation exposure defects appear on the semiconductor crystal lattice. Actually, the structure of a MOSFET consists of three materials: a semiconductor, a metal and an insulator between them. The MOSFET is a quadripolar device with a common terminal: gate-source is the input; drain-source is the output. The gate controls the electrical current passing through semiconductor medium by the field effect because the silicon oxide acts as insulating material. The proposal of this work is to show some radiation effects on the insulator of a MOSFET device. A 6430 Keithley sub-femtoamp SourceMeter was used to verify how the insulating material layer in the structure of the device varies with the radiation exposure. We have used the IEC 61267 standard radiation X-ray beams generated from a Pantak industrial unit in the radiation energy range of computed tomography. This range was chosen because we are using the MOSFET device as radiation detector for dosimetry in computed tomography. The results showed that the behaviour of the electrical current of the device is different in the insulator and semiconductor structures.
dc.formatapplication/pdf
dc.languageen
dc.publisherIOP Publishing
dc.subjectFísica médica
dc.subjectSemicondutores
dc.subjectEletrônicos e dispositivos
dc.titleEffect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam
dc.typeArtigo


Este ítem pertenece a la siguiente institución